JPH0117269B2 - - Google Patents

Info

Publication number
JPH0117269B2
JPH0117269B2 JP55092268A JP9226880A JPH0117269B2 JP H0117269 B2 JPH0117269 B2 JP H0117269B2 JP 55092268 A JP55092268 A JP 55092268A JP 9226880 A JP9226880 A JP 9226880A JP H0117269 B2 JPH0117269 B2 JP H0117269B2
Authority
JP
Japan
Prior art keywords
thyristor
main
electrode
light
outer layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55092268A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5718358A (en
Inventor
Nobutake Konishi
Mutsuhiro Mori
Masami Naito
Tomoyuki Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9226880A priority Critical patent/JPS5718358A/ja
Publication of JPS5718358A publication Critical patent/JPS5718358A/ja
Publication of JPH0117269B2 publication Critical patent/JPH0117269B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors

Landscapes

  • Thyristors (AREA)
JP9226880A 1980-07-08 1980-07-08 Photodriven type thyristor Granted JPS5718358A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9226880A JPS5718358A (en) 1980-07-08 1980-07-08 Photodriven type thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9226880A JPS5718358A (en) 1980-07-08 1980-07-08 Photodriven type thyristor

Publications (2)

Publication Number Publication Date
JPS5718358A JPS5718358A (en) 1982-01-30
JPH0117269B2 true JPH0117269B2 (en]) 1989-03-29

Family

ID=14049642

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9226880A Granted JPS5718358A (en) 1980-07-08 1980-07-08 Photodriven type thyristor

Country Status (1)

Country Link
JP (1) JPS5718358A (en])

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59124160A (ja) * 1982-12-29 1984-07-18 Fuji Electric Corp Res & Dev Ltd 光サイリスタ
JPS59132165A (ja) * 1983-01-18 1984-07-30 Hitachi Ltd 半導体装置
JPS60177945A (ja) * 1984-02-24 1985-09-11 Kubota Ltd 耐摩耗鋳物の遠心力鋳造法
US4757366A (en) * 1985-04-12 1988-07-12 Siemens Aktiengesellschaft Light-triggerable thyristor having low-loss feed of the trigger energy
FR2598043A1 (fr) * 1986-04-25 1987-10-30 Thomson Csf Composant semiconducteur de protection contre les surtensions et surintensites
JPS63107168A (ja) * 1986-10-24 1988-05-12 Fuji Electric Co Ltd 光サイリスタ
JPH01184990A (ja) * 1988-01-20 1989-07-24 Sumitomo Bakelite Co Ltd 回路形成法
JPH02126677A (ja) * 1988-11-07 1990-05-15 Toshiba Corp 半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4817634U (en]) * 1971-07-06 1973-02-28
JPS5076970A (en]) * 1973-10-01 1975-06-24
JPS54166275U (en]) * 1978-05-15 1979-11-22

Also Published As

Publication number Publication date
JPS5718358A (en) 1982-01-30

Similar Documents

Publication Publication Date Title
US4110781A (en) Bidirectional grooved thyristor fired by activation of the beveled surfaces
JPH0117269B2 (en])
EP0164106B1 (en) Pnpn switch device
JPH0213824B2 (en])
KR100698350B1 (ko) 수광소자 및 그것을 구비한 광반도체장치
EP0108874B1 (en) Radiation-controllable thyristor
JPS603790B2 (ja) サイリスタ
JPS5945232B2 (ja) 光駆動型半導体制御整流装置
US5003369A (en) Thyristor of overvoltage self-protection type
EP0069308B1 (en) Thyristor
US4114178A (en) Semiconductor controlled rectifier having an auxiliary region with localized low resistance paths to the control gate
JPS6016107B2 (ja) 自己保護型半導体制御整流装置
US4649410A (en) Radiation controllable thyristor with multiple non-concentric amplified stages
US4536783A (en) High di/dt, light-triggered thyristor with etched moat current limiting resistors
JPH0138380B2 (en])
JPS61113280A (ja) 光点弧サイリスタならびにそのスイツチング方法
JPH0539638Y2 (en])
JPS5940577A (ja) 光点弧形双方向性サイリスタ
JPS583280A (ja) サイリスタ
JPS59159567A (ja) 光駆動型半導体制御整流装置
EP0110551A2 (en) Light-activated bi-directional thyristor
JPH0222547B2 (en])
JPH0136712B2 (en])
JPH01145859A (ja) ラテラル型フォトサイリスタ
JPH027190B2 (en])